Ballistic conductance of a quantum wire at finite temperatures

N. T. Bagraev*, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, I. A. Shelykh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The temperature-dependent ballistic conductance of a quantum wire is calculated without consideration of carrier scattering. The contribution to the conductance (G) from size - quantization subbands with Ej - μ ≫ kT is described by the Landauer - Büttiker formula G = 2e2/h, where e is the elementary charge, h is Planck's constant, μ(T) is the electrochemical potential, Ej is the j-th subband bottom, T is temperature, and k is the Boltzmann constant. The contribution from other subbands decreases as their number increases, being exponentially small for higher subbands. The quantum staircase disappears when kT approaches the energy spacing between the size - quantization levels. Such temperature quenching of the quantum staircase at gate potentials corresponding to a stepwise change in the ballistic conductance is observed in studies of the quantized conductance of a silicon quantum wire.

Original languageEnglish
Pages (from-to)712-716
Number of pages5
JournalSemiconductors
Volume34
Issue number6
DOIs
Publication statusPublished - Jun 2000

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS This work was supported by the Russian Scientific Program “Physics of Solid Nanostructures” (project no. 97-1040), St. Petersburg Technical University (project no. 02.04.301.89.5.2), and the Russian Federal Program “Integration” (project no. 75:2.1).

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