AC-gate controlled transport sideband spectroscopy in GaAs quantum channels

Chi Shung Tang*, Ying Yen Chen, Quoc Hung Phan, Nzar Rauf Abdullah, Vidar Gudmundsson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A modeling investigation is conducted on the quantum transport in an n-type split-gate structure controlled by either an AC finger gate or an AC top gate. The quantum conductance is numerically computed for three different sideband approximations. The results show that various quasi-bound states (QBSs) are formed under the competing effects of photon emission and absorption at different sidebands. Additionally, it is shown that the structure of the QBSs depends on the relative proportion of an electron resonance transmission and an electron resonance reflectance induced by a sideband. Furthermore, the number of QBSs formed increases with the number of sidebands considered in the analysis.

Original languageEnglish
Article number127755
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume419
DOIs
Publication statusPublished - 1 Oct 2021

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan (Contract No. MOST 109-2112-M-239-003 ).

Publisher Copyright:
© 2021 Elsevier B.V.

Other keywords

  • AC finger gate
  • AC top gate
  • Photon
  • Quantum transport
  • Quasi-bound state
  • Sideband

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