Abstract
A microscopic theory of the normal quantized Hall effect based on the canonical equation of motion for the current operators is presented. The obtained formula gives the Hall resistance as a function of the gate voltage and shows good agreement with the MOSFET experiment by von Klitzing et al. The formula also gives the temperature dependence quantitatively and shows explicitly how the plateaus disappear at higher temperatures.
Original language | English |
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Pages (from-to) | 164-178 |
Number of pages | 15 |
Journal | Physica A: Statistical Mechanics and its Applications |
Volume | 132 |
Issue number | 1 |
DOIs | |
Publication status | Published - Aug 1985 |
Bibliographical note
Funding Information:This work was supported in part by a grant from the Natural Sciences and Engineering Research Council of Canada. We would like to thank Bob Teshima for his computing help.