1200 V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance

H. S. Lee*, M. Domeij, C. M. Zetterling, R. Ghandi, M. Östling, F. Allerstam, E. Ö Sveinbjörnsson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp-on)of 5.2 mΩcm 2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop of Vce=2V at I c=15 A (Jc=460 A/cm2).

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages1151-1154
Number of pages4
ISBN (Print)9780878493579
DOIs
Publication statusPublished - 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 14 Oct 200719 Oct 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/TerritoryJapan
CityOtsu
Period14/10/0719/10/07

Other keywords

  • Bipolar Junction Transistor
  • Emitter size effect
  • Junction Termination
  • Surface recombination

Fingerprint

Dive into the research topics of '1200 V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance'. Together they form a unique fingerprint.

Cite this